| PART |
Description |
Maker |
| TC7109 TC7109A |
The TC7109A is a 12-bit plus sign,CMOS low-power analog-to-digital converter (ADC).Only eight passive components and a crystal are required to form a complete dual-slope integrating ADC. The improved VOH source current TC7109A has features
|
Microchip
|
| DG309BDY DG309B DG308BDJ DG308BDQ DG308BDY DG309BD |
Improved Quad CMOS Analog Switches
|
VISAY[Vishay Siliconix]
|
| DG441BDN-T1-E4 DG441BDY-E3 DG441BDY-T1-E3 DG441B11 |
Improved Quad SPST CMOS Analog Switches
|
Vishay Siliconix
|
| DG212B DG211B 70040 |
Improved Quad CMOS Analog Switches
From old datasheet system
|
Vishay
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128K x 8 Ultra Low Power and Low VCC SRAM
From old datasheet system
55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| DG406AK DG406CJ DG409C_D DG409CJ DG407DJ DG407DN D |
IMPROVED, 16-CHANNEL/DUAL 8-CHANNEL, CMOS ANALOG MULTIPLEXERS
IMPROVED, 8-CHANNEL/DUAL 4-CHANNEL, CMOS ANALOG MULTIPLEXERS
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
|
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
| KM68V1000BLE_LE-L KM68U1000BLE_LE-L KM68U1000BLG-1 |
CONNECTOR ACCESSORY 连接器附
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM 128K的8位低功耗和低电压的CMOS Statinc内存
(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| CA3260 CA3260A CA3260AE CA3260E FN1266 |
Op Amp, Dual BiMOS, MOSFET Inputs, CMOS Outputs, 4MHz, Improved Input Characteristics
4MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
