PART |
Description |
Maker |
HY5DW283222AF HY5DW283222AF-22 HY5DW283222AF-25 HY |
GDDR SDRAM - 128Mb 128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
K4D551638D K4D551638D-TC K4D551638D-TC2A K4D551638 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存 CABLE ASSEMBLY; 2.9mm MALE TO 2.9mm MALE; 40 GHz CABLE 56Mbit GDDR SDRAM内存
|
Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存 ; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存 8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144 8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. DiCon Fiberoptics, Inc. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D2 |
128Mbit GDDR SDRAM
|
Samsung semiconductor
|
HY5DU113222FMP-25 HY5DU113222FMP-22 HY5DU113222FMP |
GDDR SDRAM - 512Mb
|
Hynix Semiconductor
|
HY5DU561622CTP |
256M gDDR SDRAM
|
Hynix
|
HY5DU281622ET HY5DU28162 HY5DU281622ET-4 HY5DU2816 |
128M(8Mx16) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
HY5DU283222AF-22 HY5DU283222AF-28 HY5DU283222AF-33 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor Inc.
|
HY5DU281622ET-30 HY5DU281622ET-25 HY5DU281622ET-5 |
128M(8Mx16) GDDR SDRAM
|
Hynix Semiconductor Inc.
|
K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144 128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存 4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144 4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
|
Sensitron Semiconductor Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM 300MHz 2.8V 4M x 32 DDR SDRAM 333MHz 2.8V 4M x 32 DDR SDRAM 350MHz 2.8V 4M x 32 DDR SDRAM 4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.] Etron Technology Inc. ETRON[Etron Technology Inc.]
|