PART |
Description |
Maker |
K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
A23L1616 A23L16161 A23L16161V A23L16162 A23L16162V |
70ns 2M x 16/4M x 8bit CMOS MASK ROM 100ns 2M x 16/4M x 8bit CMOS MASK ROM Power Resistor; Series:MK; Resistance:20ohm; Resistance Tolerance: /- 1 %; Power Rating:0.75W; Voltage Rating:400V; Temperature Coefficient: /-50 ppm; Mounting Type:Through Hole; Operating Temp. Min:0 C; Terminal Type:Radial Leaded 2M X 16 / 4M X 8 BIT CMOS MASK ROM 200万16 / 4米8位CMOS掩膜ROM
|
AMICC[AMIC Technology] AMIC Technology Corporation AMIC Technology, Corp.
|
TB62705CF TB62705CFN TB62705CP EE08019 TB62705 |
8BIT SHIFT REGISTER / LATCHES & CONSTANT CURRENT DRIVERS 8BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT DRIVERS From old datasheet system
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
KM48S16030 KM48S16030T-G_F10 KM48S16030T-G_F8 KM48 |
4M x 8Bit x 4 Banks Synchronous DRAM 4M x 8Bit x 4 Banks Synchronous DRAM 4米8位4银行同步DRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MN101E11G |
Microcomputer - 8bit - General Purpose
|
Panasonic
|
MN101E13G |
Microcomputer - 8bit - General Purpose
|
Panasonic
|
CXA1276K |
8bit 500MSPS Flash A/D Converter
|
SONY
|
MN101E02H |
Microcomputer - 8bit - General Purpose
|
Panasonic
|
HY5756820CT HY5756820LT |
4 Banks x 8M x 8Bit Synchronous DRAM
|
Hynix Semiconductor
|
MN101C78A |
Microcomputer - 8bit - General Purpose
|
Panasonic
|