| PART |
Description |
Maker |
| AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection
64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
From old datasheet system
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28
64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
ATMEL[ATMEL Corporation]
Atmel, Corp.
|
| AT28LV010-20 AT28LV010-25 AT28LV010-20PC AT28LV010 |
1 Megabit 128K x 8 Low Voltage Paged CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 3V, 200 ns, PDIP32
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 3V, 250 ns, PDSO32
|
Atmel Corp.
Atmel, Corp.
|
| CAT25C32 25C64 CAT25C64U14-1.8TE13 CAT25C64U14-TE1 |
32K/64K-BitSPISerialCMOSE2PROM
32K/64K-Bit SPI Serial CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
|
CATALYST[Catalyst Semiconductor]
|
| CAT28C64A CAT28C64AI-20 28C64A-20 CAT28C64A-15 CAT |
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
128Kx8 EEPROM
64K - BIT CMOS E2PROM
|
Atmel, Corp.
CATALYST[Catalyst Semiconductor]
|
| AT28BV64B06 AT28BV64B-20TU AT28BV64B-20JU AT28BV64 |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
|
ATMEL Corporation
|
| PEB2465H |
Voice Access - SICOFI4 (IOM) Single Chip CMO
|
Infineon
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| LT1512 LT1512C LT1512CN8 LT1512CS8 LT1512I LT1512I |
CAP 220PF 250VAC CERAMIC Y2/X1 2.7 A BATTERY CHARGE CONTROLLER, 580 kHz SWITCHING FREQ-MAX, PDSO8
SEPIC Constant-Current/ Constant-Voltage Battery Charger
SEPIC Constant-Current/Constant-Voltage Battery Charger
From old datasheet system
|
Linear Technology, Corp.
LINER[Linear Technology]
|
| GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| IDT71016 IDT71016S12PHG IDT71016S12PHGI IDT71016S1 |
CMOS Static RAM 1 Meg (64K x 16-Bit)
64K x 16 Static RAM
Filter Module w/out Resistor Network 64K X 16 STANDARD SRAM, 20 ns, PDSO44
CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PDSO44
Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
SRAM
INTEGRATED DEVICE TECHNOLOGY INC
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
