PART |
Description |
Maker |
KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns 32Kx8 bit high speed static RAM (5V operating), 15ns 32Kx8 bit high speed static RAM (5V operating), 12ns 32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作(,进化引脚了。在商业温度范围工作
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Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
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KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power 512Kx8 bit CMOS static RAM, 100ns, low power 524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM PT 16C 16#16 PIN PLUG 524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns 32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作),在商业和工业温度范围操作 32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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MF3257-J9CATXX MF3513-J9CATXX MF365A-J9CATXX MF312 |
STATIC RAM CARDS ER 8C 8#12 SKT RECP 8/16-bit Data Bus Static RAM Card 16位产品数据总线静态存储器
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Mitsubishi Electric Corporation Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
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UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
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NEC
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IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
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IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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M5M5256DFP-10VLL-I M5M5256DFP-10VXL-I M5M5256DFP-1 |
From old datasheet system 262144-BIT CMOS STATIC RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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TC551402J TC551402J-22 TC551402J-25 |
(TC551402J-22/-25) CMOS STATIC RAM 4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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UPD4265800LE-A80 UPD4264800LE-A80 UPD4265800LE-A70 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 64K x 16 Static RAM 1K x 8 Dual-Port Static RAM 1-Mbit (64K x 16) Static RAM x8快速页面模式的DRAM
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STMicroelectronics N.V.
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IC62VV5128LL IC62VV5128L IC62VV5128L-LL IC62VV5128 |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 512K x 8 bit 1.8V and Ultra Low Power CMOS Static RAM From old datasheet system
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ICSI[Integrated Circuit Solution Inc]
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M5M51016BRT-12VL-I M5M51016BRT-12VLL-I M5M51016BTP |
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 From old datasheet system 1048576-BIT CMOSSTATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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