| PART |
Description |
Maker |
| MTP10N10EL MTP10N10ELG |
Power MOSFET 10 Amps, 100 Volts, Logic Level; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220
|
ON Semiconductor
|
| MTD6P10EG MTD6P10ET4 MTD6P10ET4G |
Power MOSFET 6 Amps, 100 Volts
|
ON Semiconductor
|
| NTP52N10 NTP52N10_D NTP52N10D NTP52N10/D |
Power MOSFET 52 Amps, 100 Volts
Power MOSFET 52 Amps 100 Volts
|
ONSEMI[ON Semiconductor]
|
| MTP27N10E-D |
Power MOSFET 27 Amps, 100 Volts N-Channel TO-220
|
ON Semiconductor
|
| MTB40N10E-D |
Power MOSFET 40 Amps, 100 Volts N-Channel D2PAK
|
ON Semiconductor
|
| MTD9N10D MTD9N10E MTD9N10E1 MTD9N10ET4 MTD9N10E-D |
Power MOSFET 9 Amps, 100 Volts N-Channel DPAK
|
ON Semiconductor
|
| NTP75N03-06 NTB75N03-06 NTB75N03-06T4 NTP75N03-006 |
Power MOSFET 75 75Power MOSFET 75 75
Power MOSFET 75 Amps, 30 Volts N-Channel TO-220(75A,30V,N通道，TO-220封装的功率MOSFET)
Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK
|
ONSEMI[ON Semiconductor]
|
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
| NTMD3P03R2-D NTMD3P03R2 NTMD3P03R2/D |
Power MOSFET -3.05 Amps-30 Volts
Power MOSFET -3.05 Amps, -30 Volts Dual P?Channel SO(-3.05 A, -30 V，双P通道,SO-8封装的功率MOSFET)
Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SO-8
|
ON Semiconductor
|
| MMDFS3P303 MMDFS3P303R2 MMDFS3P303-D |
Power MOSFET 3 Amps / 30 Volts
Power MOSFET 3 Amps, 30 Volts P-Channel SO-8, FETKY
|
ONSEMI[ON Semiconductor]
|
