| PART |
Description |
Maker |
| MP6404 |
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| M68732HA 68732HA |
SILICON MOS FET POWER AMPLIFIER, 440-490MHz, 7W, FM PORTABLE 硅场效应晶体管功率放大器40 - 490MHz的，7瓦，调频便携
From old datasheet system
Silicon MOS FET Power Amplifier, 440-490MHz, 7W FM PORTABLE
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 440-490 MHz 7W FM PORTABLE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| 2SK2792 A5800302 |
Transistors > MOS FET > Power MOS FET
From old datasheet system
Switching (600V, 4A)
|
ROHM
|
| PF08122B |
MOS FET Power Amplifier Module
|
Renesas
|
| PF0010 |
High Frequency Power MOS FET Module
|
Renesas Technology
|
| PM45502C |
Silicon N-Channel Power MOS FET Module 硅N沟道功率MOS场效应晶体管模块
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| M68732EH 68732EH M68732 |
SILICON MOS FET POWER AMPLIFIER / 450-470MHz / 7W / FM PORTABLE RADIO
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 520-530MHz / 6.5W / FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PF01411 PF01411A |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| PF01411B |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| M68731HM 68731HM |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 145-174MHz, 6.5W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER 145-174MHz 6.5W FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER / 145-174MHz / 6.5W / FM PORTABLE RADIO
145 MHz - 174 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
