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BZY95 - (BZY95 / BZY96) Medium Power Zener and Avalanche Diodes

BZY95_2693996.PDF Datasheet


 Full text search : (BZY95 / BZY96) Medium Power Zener and Avalanche Diodes
 Product Description search : (BZY95 / BZY96) Medium Power Zener and Avalanche Diodes


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PART Description Maker
SBM52414X SBM52414Z SBM51414G SBM51414N SBM51414Z Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 中功率比迪光学标准模310纳米发光550纳米接收
Transceiver
Components and FTTx solutions - Tx 1310nm/Rx 1550nm, Medium Power
INFINEON[Infineon Technologies AG]
BCX52-10 BCX52-16 BCP52-16 BCP52-10 BC52PA 60 V, 1 A PNP medium power transistors
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
NXP Semiconductors
STM51004A STM51004G STM51004X STM51005A STM51005G 1300 nm Laser in Receptacle Package, Medium Power 1300 nm激光在插孔包,中功
(STM51004 / STM51005) 1300 nm Laser in Receptacle Package / Medium Power
1300 nm Laser in Receptacle Package,Medium Power
1300 nm Laser in Receptacle Package Medium Power
From old datasheet system
1300 nm Laser, Medium Power
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
TGA1073A TGA1073A-SCC 26- 34 GHz Medium Power Amplifier 26000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 -3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
UTC
ROHM[Rohm]
CSB772P CSB772R CSB772 CSB772E CSB772Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
CDIL[Continental Device India Limited]
SG2823 SG2823J_DESC SG2823L_DESC SG2823N SG2803J S HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS 0.5 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
POWERQUICC II HIP4 REV B
From old datasheet system
Driver - Medium Current Array
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
QM30E3Y-2H QM30E2Y-2H QM30E2Y MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
1N1199ASERIES 1N3670ASERIES 1N1203A 1N1202A 1N3673 50V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
12 AMP MEDIUM POWER SILICON RECTIFIER DIODES
13 AM MEDIUM POWER SILICON RECTIFIER DIODES
12 AM MEDIUM POWER SILICON RECTIFIER DIODES
400V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
IRF[International Rectifier]
ZDT6753 SM-8 COMPLEMENTARY MEDIUM POWER
COMPLEMENTARY MEDIUM POWER TRANSISTORS
Diodes Incorporated
Zetex Semiconductors
CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y 25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
 
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