| PART |
Description |
Maker |
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| KM616FR1000 |
64K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低电压CMOS 静态RAM) 64K的x16位超低功耗和低电压的CMOS全静态RAM4K的16位超低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| CY7C4261V CY7C4271V 7C4291V CY7C4271V-25JC CY7C426 |
128K x 9 low voltage Deep Sync FIFO, 15ns
64K x 9 low voltage Deep Sync FIFO, 25ns
64K x 9 low voltage Deep Sync FIFO, 15ns
16K x 9 low voltage Deep Sync FIFO, 25ns
32K x 9 low voltage Deep Sync FIFO, 15ns
16K x 9 low voltage Deep Sync FIFO, 15ns
32K x 9 low voltage Deep Sync FIFO, 25ns
From old datasheet system
16K/32K/64K/128Kx9 Low Voltage Deep Sync FIFOs
|
Cypress
|
| BS616UV1010ECP10 BS616UV1010ECG10 BS616UV1010DIG10 |
Ultra Low Power CMOS SRAM 64K X 16 bit
|
Brilliance Semiconductor
|
| BS616UV1010AIP10 BS616UV1010DIG10 BS616UV1010ACP10 |
Ultra Low Power CMOS SRAM 64K X 16 bit
|
Brilliance Semiconducto...
|
| N01L63W3A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K x 16 bit
|
ON Semiconductor
|
| N01L63W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K x 16 bit
|
ON Semiconductor
|
| 6206-35/BXAJC 6206-45/BXAJC 6206-45/BYAJC 6206-100 |
x8 SRAM
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits
High-Voltage, Low-Current Voltage Monitors in SOT Packages
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits x8的SRAM
|
ITT, Corp.
|
| AT28LV010-20 AT28LV010-25 AT28LV010-20PC AT28LV010 |
1 Megabit 128K x 8 Low Voltage Paged CMOS E2PROM
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 3V, 200 ns, PDIP32
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 3V, 250 ns, PDSO32
|
Atmel Corp.
Atmel, Corp.
|
| N01L63W3AB25I N01L63W3AB25IT N01L63W3A |
1 Mb Ultra-Low Power Asynchronous CMOS SRAM
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ? 16 bit
|
ON Semiconductor
|
