| PART |
Description |
Maker |
| KVR133X72RC3L/1024 |
1024MB 133MHz ECC Registered CL3 Low Profile DIMM 1024MB33MHz的ECC的超薄注册CL3内存
|
RIA Connect
|
| W3EG72126S202JD3 W3EG72126S-AJD3 W3EG72126S-D3 W3E |
1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL
|
White Electronic Designs Corporation
http://
White Electronic Design...
|
| W3EG72255S-D3 W3EG72255S335JD3XG W3EG72255MS100AJD |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG72256S335JD3 W3EG72256MS100AJD3MF W3EG72256MS1 |
2GB-256Mx72 DDR SDRAM REGISTERED ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG2256M72ASSR-JD3 W3EG2256M72ASSR265JD3XG W3EG22 |
4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG128M72ETSU262D3 W3EG128M72ETSU403JD3 W3EG128M7 |
1GB - 128Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG2128M72AFSR-D3 |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL, FBGA
|
White Electronic Design...
|
| M381L6423DTM-CCC/C4 M381L3223DTM-CCC/C4 M368L6423D |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC 184pin缓冲模块56MbD为基础的非ECC的模4/72-bit / ECC
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V827332U04S |
2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE
|
Mosel Vitelic Corp
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| M368L3223CTL M368L3223CTL-LB3 M368L3223CTL-CA2 M36 |
256MB DDR SDRAM MODULE Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
