PART |
Description |
Maker |
IBM13N64734HCA |
64M x 72 Two-Bank Unbuffered SDRAM Module(64M x 64 2组不带缓冲同步动态RAM模块) 64米72双行缓冲内存模组4米64 2组不带缓冲同步动态内存模块)
|
International Business Machines, Corp.
|
DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存 64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY27US08121A HY27US16121A HY27SS08121A HY27SS16121 |
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48 32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 32M X 16 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 64M X 8 FLASH 3.3V PROM, 30 ns, PBGA63
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
MX26L6420XAI-12 MX26L6420MI-90 MX26L6420TI-90 MX26 |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM MICA RoHS Compliant: No 64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM 4M X 16 FLASH 3V PROM, 120 ns, PDSO44
|
Macronix International Co., Ltd. http://
|
MBM29LV651UE12TR MBM29LV651UE90TR MBM29LV651UE-12 |
64M (4M x 16) BIT 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 64M (4M x 16) BIT 64M号(4米16)位 AGM3224D equivalent, 320 x 240 pixel format 4M X 16 FLASH 3V PROM, 120 ns, PDSO48 DC-DC Converter; Supply Voltage:12V; Output Voltage:3.3V; Number of Outputs:1; Power Rating:20W; Mounting Type:PC Board; Series:WPN20R 320 x 240 pixel format, LED or CFL Backlight
|
Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited. Fujitsu Component Limit...
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HYS64V64220GU-75-C2 HYS72V64220GU-75-C2 HYS72V6422 |
3.3 V 64M x 64/72-Bit/ 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules SDRAM Modules - 512MB PC133 (2-2-2) 2-bank; End-of-Life SDRAM Modules - 512MB PC133 (2-2-2) 2-bank (ECC); End-of-Life SDRAM Modules - 512MB PC133 (3-3-3) 2-bank (ECC); End-of-Life SDRAM|64MX64|CMOS|DIMM|168PIN|PLASTIC SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC 3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules 3.3400 x 64/72-Bit512MByte SDRAM内存模块168针脚无缓冲DIMM模块 64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
|
INFINEON[Infineon Technologies AG] Infineon Technologies A...
|
AMP374P6453BT1-C1H/S |
64M X 72 SDRAM DIMM
|
AVED
|
M2V64S20DTP-7L M2V64S30DTP-7L M2V64S40DTP-8L M2V64 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
M2V64S30DTP-7 M2V64S20DTP-7 M2V64S40DTP-6 M2V64S40 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 K9K1216 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory 64M x 8 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MX29LV640BUXBI-90G MX29LV640BUTI-12G MX29LV640BUTC |
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA63 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|