PART |
Description |
Maker |
2SB1316F5B 2SB1474F5B 2SD2143F5B 2SD2143F5A 2SD214 |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | TO-252 TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-252 TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 2A I(C) | TO-252 晶体管|晶体管|达林顿|叩| 70V的五(巴西)总裁|甲一(c)|52 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-252
|
Panasonic Industrial Solutions
|
FXT2907SM FXT605SM |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | SO TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|达林顿| npn型| 120伏特五(巴西)总裁| 1A条一(c)|
|
Electronic Theatre Controls, Inc.
|
2SD2242/2SD2242A 2SD2242Q |
2SD2242. 2SD2242A - NPN Transistor Darlington TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | TO-126VAR 晶体管|晶体管|达林顿|叩| 60V的五(巴西)总裁| 4A条一(c)|26VAR
|
Panasonic, Corp.
|
2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR From old datasheet system NPN SILICON POWER TRANSISTOR Low-Power, Single/Dual-Level Battery Monitors with Hysteresis TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁| 3A条一(c)|26
|
NEC Corp. NEC, Corp.
|
2SD2457R 2SD2463K |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1.5A I(C) | SC-62 TRANSISTOR | BJT | DARLINGTON | NPN | 31V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 31V五(巴西)总裁|甲一(c)|园区
|
Electronic Theatre Controls, Inc.
|
2SD986 2SD985 2SD986L |
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 1.5AI(丙)|26 NPN SILICON DARLINGTON POWER TRANSISTORS
|
NEC[NEC]
|
CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA TRANSISTOR | BJT | NPN | 200V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-237AA TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-237 TRANSISTOR | BJT | PNP | 160V V(BR)CEO | TO-237 晶体管|晶体管|进步党| 160V五(巴西)总裁|37 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-237AA
|
Infineon Technologies AG
|
2SD560 2SD560LB 2SD560MB |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁| 5A条一(c)| TO - 220AB现有 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
|
NEC, Corp. NEC Corp.
|
AP1034 AP1038 AP1023 AP1145 AP1037 AP1022 AP1065 A |
TRANSISTOR | BJT | PNP | 275V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 170V V(BR)CEO | 10A I(C) | TO-5 TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-33 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 10A条一(c)|
|
SCHURTER AG
|
SLA4031 SLA4010 |
Independent BJT Power Module Darlington BJT Array From old datasheet system
|
Sanken
|