| PART |
Description |
Maker |
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| FM93CS66 FM93CS66V FM93CS66E FM93CS66L FM93CS66LZ |
(MICROWIRE?Bus Interface) 4096-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE⑩ Bus Interface) 4096-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE ™ Bus Interface))4096-Bit Serial EEPROM
(MICROWIRE Bus Interface) 4096-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE Bus Interface))4096-Bit Serial EEPROM with Data Protect and Sequential Read
Protect (MICROWIRE TM Bus Interface))4096-Bit Serial EEPROM with Data Protect and Sequential Read
|
FAIRCHILD[Fairchild Semiconductor]
|
| NVM3060 |
4096-Bit EEPROM
|
ETC[ETC]
|
| Q67100-Q2039 HYB314100BJ-50 HYB314100BJ-60 HYB3141 |
4M x 1 Bit FPM DRAM 3.3 V 60 ns
4M x 1 Bit FPM DRAM 3.3 V 50 ns
-4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
4M x 1 Bit FPM DRAM 3.3 V 70 ns
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MCM2114 |
4096-Bit Static RAM
|
Motorola Semiconductor
|
| MK4027 |
4096 X 1 BIT DYNAMIC RAM
|
MOSTEK
|
| AM27S33 |
4096 bit Bipolar PROM
|
Advanced Micro Devices
|
| MCM2114P45 MCM2114P-45 |
4096-Bit Static RAM
4096 Bit Static RAM
|
Motorola / Freescale Semiconductor
|
| UPD791 |
4096-BIT CCD IMAGE SENSOR
|
NEC
|
| AM27S25 |
4096-Bit Bipolar Registered PROM
|
AMD
|
| TC5504A |
4096 word x 1 Bit CMOS Static RAM
|
Toshiba
|
