| PART |
Description |
Maker |
| BC847S |
Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| BC847S |
Multi-Chip TRANSISTOR (NPN)
|
SHENZHEN YONGERJIA INDUSTRY CO.,LTD
|
| FMBA14 |
NPN Multi-Chip Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| TPCP8H01 |
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| BC846S |
Plastic-Encapsulate Multi-Chip (NPN NPN) Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| MMPQ2222A FFB2222A FFB2222A_1 FMB2222A MMPQ2222ANL |
500 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN Multi-Chip General Purpose Amplifier
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | CHIP 晶体管|晶体管|进步党| 150伏五（巴西）总裁|芯片
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | CHIP 晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁|芯片
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | CHIP 晶体管|晶体管| npn型| 140伏特五（巴西）总裁|芯片
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|30VV(BR)CEO|CHIP
|
Zetex Semiconductor PLC
Central Semiconductor, Corp.
Cypress Semiconductor, Corp.
|
| CP705 |
Chip Form: SILICON TRANSISTOR
Small Signal Transistor PNP - High Current Transistor Chip
|
Central Semiconductor Corp
|
| M36L0R8060T1ZAQE M36L0R8060T1ZAQF M36L0R8060T1ZAQT |
256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
