| PART |
Description |
Maker |
| NTF3055-100T3LF NTF3055-100T1 NTF3055-100-D |
Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 3A条（丁）|的SOT - 223
|
ON Semiconductor
|
| PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset
|
MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
|
| NTF6P02T3 NTF6P02T3-D NTF6P02T3G NTF6P02T3/D |
Receptacle With A Wire Wrap Tail NTF6P02T3
Power MOSFET -6.0 Amps, -20 Volts P?Channel SOT23(-6.0A,-20V，P通道，SOT-23封装的功率MOSFET) 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET -6.0 Amps, -20 Volts P??annel SOT?23
Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223
20V P-ch HD3e SOT223
|
ONSEMI
ON Semiconductor
|
| CHT918 CHT2907A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | SOT-23 晶体管|晶体管|进步党| 60V的五（巴西）总裁| SOT - 23封装
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | SOT-23 晶体管|晶体管|叩| 15V的五（巴西）总裁| SOT - 23封装
|
Unisonic Technologies Co., Ltd.
|
| MRF281 MRF281ZR1 |
2000 MHz, 4 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR
|
Freescale (Motorola)
Freescale Semiconductor Inc (Motorola)
|
| NDT456 NDT456P NDT456PJ23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223
P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation
|
| NDT452 NDT452AP NDT452APJ23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223
P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRFS140 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 19.4A I(D) | SOT-186VAR
|
|
| BCX70H BCX70HT_R BCX70JT/R BCX70HT/R |
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | SOT-23 晶体管|晶体管|叩| 45V的五（巴西）总裁| 200mA的一（c）| SOT - 23封装
TRANSISTOR|BJT|NPN|45VV(BR)CEO|200MAI(C)|SOT-23
|
POSEICO SPA
EPCOS AG
|
| BSR13T/R BSR14T/R |
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | SOT-23
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SOT-23 晶体管|晶体管|叩| 40V的五（巴西）总裁| 800mA的一（c）| SOT - 23封装
|
Advanced Semiconductor, Inc.
|
