PART |
Description |
Maker |
PTFA041501GL PTFA041501HL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Infineon Technologies AG
|
PTFA180701E PTFA180701EV4R0 PTFA180701EF PTFA18070 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
PTFA142401EL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
PTFA261301E PTFA261301F |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz
|
Infineon Technologies AG
|
PTF240101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz
|
Infineon Technologies AG
|
PTFB090901FA PTFB090901EA |
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz
|
Infineon Technologies AG
|
PTFA240451E |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz
|
Infineon Technologies AG
|
PTFC261402FC |
Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 ?2690 MHz
|
Cree, Inc
|
PTFA092201E PTFA092201F |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz
|
Infineon Technologies AG
|
PTVA084007NF |
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48 V, 755 ?805 MHz
|
Cree, Inc
|
PTFA211801E PTFA211801F |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|