| PART |
Description |
Maker |
| LM393AFE LM393FE LM393N LM193FE LM193A LM293AN LM2 |
Low power dual voltage comparator DUAL COMPARATOR, 4000 uV OFFSET-MAX, 1300 ns RESPONSE TIME, CDIP8
LM193/293/393/A/2903 Dual Voltage Comparator
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NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| ISL84517IH-T ISL84517IB-T ISL84517IB ISL84517 ISL8 |
GIGATRUE 550 CAT PATCH CABLE NO BOOT 7FT RED
512 x 36 synchronous FIFO memory 120-HLQFP 0 to 70 低电压，双电源，聚苯乙烯，模拟开
Low-Voltage Dual Supply SPST Analog Switches
Low-Voltage, Dual Supply, SPST, Analog Switches
Low-Voltage/ Dual Supply/ SPST/ Analog Switches
Analog Switch, SPST, Single, NClosed, Ron = 13 @ V, Ron Flatness Max 3Ω, .5V to V Supply
Analog Switch, SPST, Single, NOpen, Ron = 13 @ V, Ron Flatness Max 3Ω, .5V to V Supply
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| BC859W BC859BW |
Low current (max. 100 mA). Low voltage (max. 45 V). Collector-base voltage VCBO -30
PNP General Purpose Transistor
|
TY Semiconductor Co., Ltd
TY Semicondutor
|
| M28W320EBB85ZB1T M28W320EBT85N1T M28W320EBB85N1T M |
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 12.7 V; VZ min.: 11.4 V; VZ nom: 12 V
surface mount silicon Zener diodes
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 15.6 V; VZ min.: 13.8 V; VZ nom: 15 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 11.6 V; VZ min.: 10.4 V; VZ nom: 11 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 10.6 V; VZ min.: 9.4 V; VZ nom: 10 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.5 V; VZ min.: 3.1 V; VZ nom: 3.3 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 14.1 V; VZ min.: 12.4 V; VZ nom: 13 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.6 V; VZ min.: 2.2 V; VZ nom: 2.4 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.9 V; VZ min.: 2.5 V; VZ nom: 2.7 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.2 V; VZ min.: 2.8 V; VZ nom: 3 V
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位（处理器x16插槽，引导块V电源快闪记忆
|
意法半导
STMicroelectronics N.V.
|
| CMPZ4615 CMPZ4616 CMPZ4614 CMPZ4617 CMPZ4618 |
350mW LOW NOISE ZENER DIODE 5% TOLERANCE
VARISTOR, 1206 18VDC 0.4JVARISTOR, 1206 18VDC 0.4J; Voltage, varistor at 1mA:25.5V; Voltage, clamping max:42V; Voltage, clamping 8/20us max:40V; Energy, transient 10/1000us max:0.4J; Current, peak 8/20us max:150A; Voltage rating,
|
Central Semiconductor Corp.
|
| BXA30-24T05-15-1 BXA30-24T05-15F BXA30-24T05-12 BX |
Low voltage dual SP4T switch
Low voltage 0.5/0.8O max dual SPDT switch with break before make feature
Low voltage 0.5 Ohm Max single SPDT switch with break-before-make feature
Low voltage 1 Ohm max single SPDT switch with break-before-make feature 模拟IC
|
Grayhill, Inc.
|
| MAX990EUA-T MAX994 MAX989EUA-T MAX990ESA MAX990EKA |
Micropower, Low-Voltage, UCSP/SC70, Rail-to-Rail I/O Comparators DUAL COMPARATOR, 7000 uV OFFSET-MAX, 300 ns RESPONSE TIME, PDSO8
Micropower, Low-Voltage, SOT23, Rail-to-Rail I/O Comparators DUAL COMPARATOR, 7000 uV OFFSET-MAX, PDSO8
Micropower, Low-Voltage, UCSP/SC70, Rail-to-Rail I/O Comparators COMPARATOR, 7000 uV OFFSET-MAX, PBGA6
|
Maxim Integrated Products, Inc.
|
| BCX70H |
Low current (max. 100 mA). Low voltage (max. 45 V).Collector-base voltage VCBO 45 V
|
TY Semiconductor Co., Ltd
|
| BSR17A |
High current (max. 100 mA). Low voltage (max. 40 V). Emitter-base voltage VEBO 6 V
|
TY Semiconductor Co., Ltd
|
| STG3856 |
Low Voltage 1.0?/a> Max Dual SP3T Switch With Break Before Make Feature
|
STMicroelectronics
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
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