| PART |
Description |
Maker |
| CY25BAH-8F CY25BAH-8F-T13 |
D-Subminiature Connector; Gender:Female; Number of Contacts:80; Contact Termination:IDC; Body Material:Steel; Contact Plating:Nickel; Leaded Process Compatible:No; Mounting Type:PC Board; Peak Reflow Compatible (260 C):No
NCH IGBT FOR STROBE FLASHER
Transistors>IGBT>for Stlobe use
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| CY25AAJ-8 CY25AAJ-8-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| CY25CAJ-8F CY25CAJ-8F-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| CY20AAJ-8 CY20AAJ-8-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4009ANS RJP4009ANS-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| CT30VS-8 |
STROBE FLASHER USE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CT20TM-8 |
STROBE FLASHER USE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CT20ASL-8 |
STROBE FLASHER USE 频闪闪光器使
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CT20VS-8 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| CT30TM-8 |
128 x 64 pixel format, LED Backlight available 频闪闪光器使
STROBE FLASHER USE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
