PART |
Description |
Maker |
2SK3560 |
Silicon N-channel power MOSFET For PDP/For high-speed switching 30 A, 230 V, 0.074 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
HAT1026R-EL-E HAT1026R |
7 A, 30 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon P Channel Power MOSFET High Speed Power Switching
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
BF998R |
From old datasheet system Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
|
SIEMENS[Siemens Semiconductor Group] Infineon
|
HAT1024R-EL-E HAT1024R-15 |
3.5 A, 30 V, 0.34 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
INK0003AX08 INK0003AC1 INK0003AU1 |
High speed switching Silicon N-channel MOSFET
|
Isahaya Electronics Corporation
|
INK0001AX08 INK0001AC1 INK0001AM1 INK0001AU1 INK00 |
High speed switching Silicon N-channel MOSFET
|
Isahaya Electronics Corporation
|
INK0010AC1 INK0010AM1 INK0010AT2 INK0010AU1 INK001 |
High speed switching Silicon N-channel MOSFET
|
Isahaya Electronics Corporation
|
INJ0011AU1 INJ0011AC1 INJ0011AM1 INJ0011AT2 INJ001 |
High speed switching Silicon P-channel MOSFET
|
Isahaya Electronics Corporation
|
BF999 Q62702-F1132 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz/ preferably in FM applications) From old datasheet system Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
H7N1004LS |
Silicon N-Channel MOSFET High-Speed Power Switching
|
Renesas Electronics Corporation.
|
HS56021 HS56021TZ-E |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
HS54097TZ-E |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|