| PART |
Description |
Maker |
| IRG4PSH71K |
78 A, 1200 V, N-CHANNEL IGBT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-274AA package
|
International Rectifier
|
| IRGPH40M |
1200V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| IGP01N120H2 IGB01N120H2 IGD01N120H2 IGB01N120H2E30 |
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT D2Pak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT DPak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT TO220
HighSpeed 2-Technology
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| FGW40N120HD |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| IRG4BH20K-L |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-262 package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IKW03N120H2 Q67040-S4597 IKB03N120H2 IKP03N120H2 Q |
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT D2Pak
1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package.
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO247
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO220
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
From old datasheet system
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
