| PART |
Description |
Maker |
| FGW15N120HD |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
| IRG4PSH71UPBF |
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package
|
International Rectifier
|
| FGW40N120VD |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| FGW40N120HD |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| AUIRGDC0250 |
1200V Automotive Low VCEon Discrete IGBT in a Super TO-220 package
|
International Rectifier
|
| IRG7PH35UD1-EP |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
|
International Rectifier
|
| IHW15T120 |
IGBTs & DuoPacks - 15A / 1200V IGBT and 9A / 1200V Diode in DuoPack
IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
|
Infineon
|
| HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4PH50S |
1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=1.47V @Vge=15V Ic=33A)
|
IRF[International Rectifier]
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| 7MBP75RJ120 |
IGBT IPM R-series 1200V class 1200V / 75A 7 in one-package
|
Fuji Electric
ETC[ETC]
List of Unclassifed Manufacturers
|
