| PART |
Description |
Maker |
| PSMN5R9-30YL |
N-channel 6.1 m30 V TrenchMOS logic level FET in LFPAK
N-channel 6.1 m 30 V TrenchMOS logic level FET in LFPAK
|
NXP Semiconductors N.V.
|
| PHD69N03LT PHP69N03LT PHB69N03LT PHB69N03LT/T3 |
69 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel TrenchMOS transistor Logic level FET(N沟道TrenchMOS 晶体管逻辑电平场效应管)
N-channel TrenchMOS transistor Logic level FET(N娌??TrenchMOS ?朵?绠￠?杈??骞冲????绠々
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PHP160NQ08T PHB160NQ08T |
CAP 0.1UF 100V 10% X7R AXIAL TR-14 75 A, 75 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel TrenchMOS standard level FET
N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PSMN057-200B PSMN057-200B_1 |
N-channel TrenchMOS(tm) transistor
N-channel TrenchMOS transistor
From old datasheet system
N-channel TrenchMOS TM transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PHT6NQ10T PHT6NQ10T_1 |
N-channel TrenchMOS(tm) transistor
From old datasheet system
N-channel TrenchMOS? transistor
N-channel TrenchMOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| IRF630S IRF630 |
N-channel TrenchMOS TM transistor
N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHD108NQ03LT PHB108NQ03LT PHP_PHB_PHD108NQ03LT-02 |
TrenchMOS(tm)logic level FET
From old datasheet system
TrenchMOS TM logic level FET
TrenchMOS logic level FET 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PHKD3NQ10T PHKD3NQ10T_1 |
Dual N-channel TrenchMOS(tm) transistor
From old datasheet system
Dual N-channel TrenchMOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PHK24NQ04LT |
TrenchMOS logic level FET 21200 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012
From old datasheet system
TrenchMOS (tm) logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| VG95328C |
One Part M30 Proximity Sensor
|
Honeywell Sensing
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| PHP73N06 PHP73N06T PHP73N06T127 PHB73N06T |
TrenchMOS(tm) standard level FET
TrenchMOS (tm) standard level FET
73 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Philips
NXP SEMICONDUCTORS
|
