| PART |
Description |
Maker |
| CM1200HB-66H |
HIGH POWER SWITCHING USE INSULATED TYPE 1200 A, 3300 V, N-CHANNEL IGBT
|
Mitsubishi Electric, Corp.
POWEREX[Powerex Power Semiconductors]
|
| CTDS1608BLF-335 |
1 ELEMENT, 3300 uH, GENERAL PURPOSE INDUCTOR, SMD
|
CENTRAL TECHNOLOGIES
|
| C947U332MYWDBA7317 |
Ceramic, Safety, C900_Y, 3300 pF, 20%, Y5U, Lead Spacing = 7.5mm
|
Kemet Corporation
|
| HEMT-3300 |
HEMT-3300 · T-1 3/4 670 nm High Radiant Intensity Emitter
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| QID3320002 |
Dual IGBT HVIGBT Module 200 Amperes/3300 Volts
|
Powerex Power Semicondu...
|
| QRJ3310002 QRL3310002 QRE3310002 QRK3310002 |
Fast Recovery Diode Module 100 Amperes/3300 Volts
|
Powerex Power Semiconductors
Powerex Power Semiconductor...
Powerex Power Semicondu...
|
| LXE6.3VB332M18X15LL |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 V, 3300 uF, THROUGH HOLE MOUNT RADIAL LEADED
|
United Chemi-Con, Inc.
|
| PDM-81M-3.8GSQ |
3300 MHz - 4300 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.7 dB INSERTION LOSS
|
MERRIMAC INDUSTRIES INC
|
| EST338M016AL6AA |
Aluminum Electrolytic, 105C LowZ, EST, 3300 uF, 20%, 16 V, -40/ 105C, Lead Spacing = 5mm
|
Kemet Corporation
|
| HMC409LP4 |
3300 MHz - 3800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
HITTITE MICROWAVE CORP
|
| ALS30A332NP450 |
Aluminum Electrolytic, 85C, ALS30, 3300 uF, 20%, 450 V, -40/ 85C
|
Kemet Corporation
|
|
