| PART |
Description |
Maker |
| HM514800LJP-7 HM514800LJP-10 HM514800LZP-10 HM5148 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
100ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
| HM5117400BS-6 HM5117400BS-7 HM5117400BS-8 HM511740 |
4194304-WORD X 4-BIT DYNAMIC RANDOM ACCESS MEMORY
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| MCM40512S10 MCM40L512S10 MCM40512 MCM40512S70 MCM4 |
512K x 40 Bit Dynamic Random Access Memory Module
|
MOTOROLA[Motorola, Inc]
MOTOROLA INC
|
| AK481024 AK581024AG AK581024AS |
1,048,576 x 8 bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK5368192WP-70 |
8,388,608 by 36 Bit CMOS Dynamic Random Access Memory
|
http://
ACCUTEK MICROCIRCUIT CORPORATION
|
| HM514260CLJ-7 HM514260CTT-7 HM514260CLJ-6R HM51S42 |
262,144-word x 16-bit Dynamic Random Access Memory
|
Hitachi,Ltd.
|
| NTE21256 |
262,144-Bit Dynamic Random Access Memory (DRAM)
|
NTE[NTE Electronics]
|
| 5164160A |
4,194,304-Word ′ 4-Bit Dynamic Random Access Memory
From old datasheet system
|
hitachi
|
| 5164400A |
4,194,304-Word ′ 5-Bit Dynamic Random Access Memory
From old datasheet system
|
hitachi
|
| 51W1616C |
4,194,304-Word ′ 2-Bit Dynamic Random Access Memory
From old datasheet system
|
hitachi
|
| 51W16165 |
4,194,304-Word ′ 0-Bit Dynamic Random Access Memory
From old datasheet system
|
hitachi
|
