| PART |
Description |
Maker |
| HMC220MS8 |
XCV50E-7FGG256C - NOT RECOMMENDED for NEW DESIGN
GaAs MMIC SMT DOUBLEBALANCED MIXER, 5 - 12 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| HMC207S8 |
50000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs MMIC SMT DOUBLEBALANCED MIXER, 0.7 - 2.0 GHz
|
美国讯泰微波有限公司上海代表
Hittite Microwave Corporation
|
| HSMS-8202-TR2G HSMS-8209-TR2G HSMS-8202-BLKG |
SILICON, KU BAND, MIXER DIODE
Surface Mount Microwave Schottky Mixer Diodes
|
AVAGO TECHNOLOGIES LIMITED
|
| Q62702-F1582 BF569W Q62702-F1322 |
From old datasheet system
PNP Silicon RF Transistor (For oscillators mixer and self-oscillating mixer stages in UHF TV-tuner)
PNP Silicon RF Transistor kein Status
PNP Silicon RF Transistor (For oscillators, mixer and self-oscillating mixer stages in UHF TV-tuner)
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) NPN硅射频晶体管（低失真输出天线的宽带和电信放大级）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| LAVI-17VH |
Frequency Mixer 470 MHz - 1730 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 8.9 dB CONVERSION LOSS-MAX
|
Mini-Circuits
|
| MCA-35LH |
Frequency Mixer WIDE BAND 500 MHz - 3500 MHz RF/MICROWAVE TRIPLE BALANCED MIXER, 8.9 dB CONVERSION LOSS-MAX
|
Mini-Circuits
|
| BAT15-02V |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
Schottky Diodes for Mixer Applications
|
INFINEON TECHNOLOGIES AG
|
| HSMS-2829 HSMS-2827 HSMS-2828 HSMS-2823 HSMS-282B |
SILICON, C BAND, MIXER DIODE
RF混频检测器二极
RF mixer/detector diode
|
AGILENT TECHNOLOGIES INC
|
| 26BAM0545 |
20000 MHz - 38000 MHz RF/MICROWAVE TRIPLE BALANCED MIXER
20.0-38.0 GHz GaAs MMIC Balanced Mixer
|
MIMIX[Mimix Broadband]
|
| DPA422PN DPA423GN DPA425GN DPA424PN DPA425PN DPA42 |
DC-DC Forward Converter Design Guide Application Note AN-31
DPA-Switch DC-DC Forward Converter Design Guide
|
Power Integrations, Inc.
Power Integrations, Inc...
|
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
