| PART |
Description |
Maker |
| KVR400X64C3A/1G |
1024MB 400MHz DDR Non-ECC CL3 (3-3-3) DIMM 1024MB00MHz的复员非ECC CL3-3-3）内
|
Electronic Theatre Controls, Inc.
|
| IS43DR86400 IS46DR16320 IS43DR16320 |
512Mb (x8, x16) DDR2 SDRAM
Clock frequency up to 400MHz
|
Integrated Silicon Solution, Inc
Integrated Silicon Solu...
|
| M393T6553CZA-CE7 M393T2950CZ3-CCC M393T2950CZ3-CD5 |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb C-die 72-bit ECC
|
SAMSUNG[Samsung semiconductor]
|
| M381L6423DTM-LCC_C4 M368L1624DTM M368L1624DTM-CCC |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W3H64M72E-667ES W3H64M72E-667ESI W3H64M72E-400ESI |
64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package 64米72 DDR2 SDRAM08 PBGA封装多芯片封
|
Atmel, Corp.
Fujitsu, Ltd.
|
| D2008UK D2008 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-400MHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| M374S6553BTS-C7A M366S2953BTS-C7A M366S3354BTS M36 |
SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC
|
SAMSUNG[Samsung semiconductor]
|
| NA570L-R8GI-H81-US |
Supports 32 GB DDR3-1600 non-ECC/ECC memory
|
Axiomtek Co., Ltd.
|
| D2007UK D2007 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-400MHz,单端)
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| HYB18T1G160AC-3.7 HYB18T1G160AC-5 HYB18T1G400AC-3. |
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (64Mx16) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (256Mx4) DDR2 400 (3-3-3); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 533 (4-4-4); Available 3Q04
DDR2 SDRAM Components - 1Gb (128Mx8) DDR2 400 (3-3-3); Available 3Q04
|
Infineon
|
