| PART |
Description |
Maker |
| CY7C1423JV18-250BZXC |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture; Architecture: DDR-II SIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1392BV18-278BZXC CY7C1392BV18-278BZC CY7C1392B |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 512K X 36 DDR SRAM, 0.5 ns, PBGA165
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 512K X 36 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 8 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 8 DDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1394JV18-300BZC CY7C1394JV18-300BZI CY7C1394JV |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1524AV18 CY7C1522AV18-278BZC CY7C1524AV18-278B |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1393KV18-333BZI CY7C1393KV18-300BZXC |
18-Mbit DDR II SIO SRAM Two-Word Burst Architecture
|
Cypress
|
| CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1568KV18-550BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1568KV18-500BZXC CY7C1568KV18-500BZC CY7C1570K |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1418BV18-278BZC CY7C1418BV18-278BZI CY7C1418BV |
36-Mbit DDR-II SRAM 2-Word Burst Architecture 4M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
