PART |
Description |
Maker |
M5M5256CP-10LL M5M5256CP-10XL M5M5256CP-85LL M5M52 |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word8位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM 262144-bit (32768 x 8-bit) CMOS static RAM, 85ns 262144-bit (32768 x 8-bit) CMOS static RAM, 100ns
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
CXK5B81020J CXK5B81020J-12 CXK5B81020TM CXK5B81020 |
131072-word ′ 8-bit High Speed Bi-CMOS Static RAM 131072-word ? 8-bit High Speed Bi-CMOS Static RAM 131072-word 8-bit High Speed Bi-CMOS Static RAM 131072-word 8-bit High Speed Bi-CMOS Static RAM 131072字?8位高速双CMOS静态RAM 128 x 64 pixel format, LED Backlight available 131072字?8位高速双CMOS静态RAM
|
SONY[Sony Corporation] Sony, Corp.
|
M5M5278DP M5M5278FP M5M5278J M5M5278VP-20V M5M5278 |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HN27256G-25 |
32768-word x 8-Bit UV Erasable and Programmable ROM
|
Hitachi Semiconductor
|
AD9260 AD9260AS AD9260EB |
16-Bit High Speed Oversampled A/D Converter High-Speed Oversampling CMOS ADC with 16-Bit Resolution at a 2.5 MHz Output Word Rate
|
AD[Analog Devices]
|
HN58C256FP-20 |
32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM
|
Hitachi Semiconductor
|
ISL5761EVAL1 ISL5761IA ISL57612IB ISL5761IB ISL576 |
10-bit/ 3.3V/ 130/210MSPS/ CommLink TM High Speed D/A Converter CONNECTOR ACCESSORY 10-bit, 3.3V, 130/210MSPS, CommLink TM High Speed D/A Converter PARALLEL, WORD INPUT LOADING, 0.035 us SETTLING TIME, 10-BIT DAC, PDSO28 10-bit, 3.3V, 130/210MSPS, CommLink TM High Speed D/A Converter 10位,3.3伏,130/210MSPSCommLink商标高速D / A转换 10-bit, 3.3V, 130/210MSPS, CommLink TM High Speed D/A Converter
|
Intersil Corporation Intersil, Corp.
|
M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
LC35256DM LC35256DT-10 LC35256DT-70 LC35256D-10 25 |
x8 SRAM Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
HN27C256FP HN27C256FP-25T HN27C256FP-30T |
32768 WORD X 8 BIT CMOS ONE TIME ELECTICALLY PROGRAMMABLE ROM 32768字8位CMOS一次性可编程ROM ELECTICALLY N/A
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
MS52C1162A |
65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM 1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字6位或128k字位静态RAM 1M字6位或2M字OTPROM)
|
OKI SEMICONDUCTOR CO., LTD.
|