| PART |
Description |
Maker |
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| MX29LV400CBXHI-70Q MX29LV400CTXHI-70Q 29LV400C-90 |
4分位[12k × 8 / 256K × 16] CMOS单电V时仅闪存
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO44
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 55 ns, PDSO48
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 55 ns, PBGA48
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Macronix International Co., Ltd.
PROM
MACRONIX INTERNATIONAL CO LTD
|
| GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology, Inc.
|
| IDT71V65603 IDT71V65803S150PFI IDT71V65803S150BQI |
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
From old datasheet system
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs
|
IDT[Integrated Device Technology]
|
| MBM29LV400B-10 MBM29LV400B-12 MBM29LV400T-10 MBM29 |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器)
|
Fujitsu Limited
|
| MX27C4111 MX27C4111MC-10 MX27C4111MC-12 MX27C4111M |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE 256K X 16 OTPROM, 90 ns, PDIP40
SIGN, NO SMOKING, 250X350MM, RP; RoHS Compliant: NA
|
Macronix International Co., Ltd.
PROM
MCNIX[Macronix International]
|
| MX29LV400BXBI-70 MX29LV400TXBI-70 MX29LV400TXBC-55 |
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
COG Technology, 240 x 160 pixel format
240 x 160 pixel format, Available with EL Backlight
CB 26C 26#16 PIN PLUG
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Macronix International Co., Ltd.
PROM
http://
|
| GS881E18BD-200IV GS881E36BGT-200V |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
| MBM29F400TC MBM29F400TC-55 MBM29F400TC-55PF MBM29F |
4M (512K X 8/256K X 16) BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MBM29LV400TC-12 MBM29LV400TC-12PBT MBM29LV400TC-12 |
FLASH MEMORY 4M (512K x 8/256K x 16) BIT
|
Fujitsu Microelectronics
|
| MX23C4100 23C4100-10 23C4100-12 23C4100-15 |
4M-BIT [512K x 8/256K x 16] MASK ROM
|
MCNIX[Macronix International]
|
