| PART |
Description |
Maker |
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| 2N6132 2N6101 2N6491 2N6486 2N6487 2N6489 2N6099 2 |
NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
(2N6130 - 2N6134) NPN SILICON TRANSISTOR
Leaded Power Transistor General Purpose
Leaded Power Transistor Darlington
|
http://
ON Semiconductor
Central Semiconductor Corp.
Advanced Semiconductor
CENTRAL[Central Semiconductor Corp]
Central Semiconductor C...
|
| 2SA1843 2SA1843M 2SA1843L |
Silicon power transistor
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 5A条一（c）|园区
|
NEC Corp.
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| MP4513 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SD560 2SD560LB 2SD560MB |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 5A条一（c）| TO - 220AB现有
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC, Corp.
NEC Corp.
|
| 2SD1000 2SD1000-T1 2SD1000-T2 2SD1000-AZ |
700 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
NEC[NEC]
|
| 2SB624 2SB624-T1B 2SB624-L 2SB624-T2B 2SB624BV3 |
BJT 双极型晶体管
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
Silicon transistor
|
NEC, Corp.
NEC[NEC]
Weitron Technology
|
| 2SC3734 2SC3734-L 2SC3734-T1B 2SC3734-T2B |
Silicon transistor
HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC[NEC]
|
| 2SB1555B 2SB1555 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS
3-Pin, Ultra-Low-Power SC70/SOT µP Reset Circuits
|
TOSHIBA
|
