| PART |
Description |
Maker |
| BAT54SDW BAT54CDW BAT54ADW BAT54BRW-TP BAT54SDW-TP |
200mWatt, 30Volt Schottky Barrier Diode
DIODE SCHOTTKY 200MW 30V SOT363 0.2 A, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| BAT14 BAT14-03W |
Silicon Schottky Diode
Schottky Diodes - RF Schottky diode for DBS mixer application to 12GHz
|
Infineon Technologies A...
Infineon Technologies AG
|
| BAT62-02L BAT62-02W BAT62-08S BAT62-07W BAT62-03W |
Latest Silicon Discretes - Schottky Diode for power leveling
Schottky Diodes - Low barrier silicon RF Schottky diode for detectors
Schottky Diodes - Low barrier silicon RF Schottky diode array
|
Infineon
|
| CMSSH-3E CMSSH-3SE CMSSH-3AE CMSSH-3CE |
SMD Schottky Diode Dual: High Current: Common Anode
SMD Schottky Diode Dual: High Current: Common Cathode
SMD Schottky Diode Dual: High Current: In Series
SMD Schottky Diode Single: High Current
ENHANCED SPECIFICATION SURFACE MOUNT, SUPERmini SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| BAS40DW-04 BAS40DW-05-TP BAS40DW-06-TP BAS40TW BAS |
200mW SCHOTTKY BARRIER Diode
DIODE SCHOTTKY 200MW 40V SOT363 0.2 A, 40 V, 4 ELEMENT, SILICON, SIGNAL DIODE
DIODE SCHOTTKY ARRAY 40V SOT-363 0.2 A, 40 V, 3 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| Q62702-A1234 |
Silicon Schottky Diode (Rectifier Schottky diode for modem applications High reverse voltage For power supply)
|
SIEMENS[Siemens Semiconductor Group]
|
| CMPSH05-4 |
SMD Schottky Diode Single
SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| BAT54WX-TP |
DIODE SCHOTTKY 30V SOD-523 0.2 A, 30 V, SILICON, SIGNAL DIODE
200mWatt, 30Volt Schottky Diodes
|
Tianjin Global Magnetic Card Co., Ltd.
Micro Commercial Components
|
| BAT54W |
30V 0.2A Schottky Discrete Diode in a SOT-323 package
SCHOTTKY DIODE 0.5 Amp
|
International Rectifier
|
| NTHD4N02F NTHD4N02FT1G NTHD4N02FT1 NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™
|
ON Semiconductor
|
