| PART |
Description |
Maker |
| NMA5108-B1M |
High Power Broadband Noise Sources 100 Hz to 300 MHz
|
Micronetics, Inc.
|
| NMA2516-1T |
High Power Broadband Noise Sources 7800 MHz to 8500 MHz
|
Micronetics, Inc.
|
| NMA2512-2T |
High Power Broadband Noise Sources 10 MHz to 2000 MHz
|
Micronetics, Inc.
|
| NMA2512-1T |
High Power Broadband Noise Sources 10 MHz to 2000 MHz
|
Micronetics, Inc.
|
| BFR106 Q62702-F1219 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MAX3524 |
"Low-Noise, High-Linearity Broadband Amplifier"
|
Maxim
|
| BFR193W |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG]
http://
|
| BFP183W |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| NMA5300-A1M |
High Power Broadband Noise Sources 2000 MHz to 18000 MHz
|
Micronetics, Inc.
|
| BFP183R Q62702-F1594 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BFP183W Q62702-F1503 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
