| PART |
Description |
Maker |
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Corporation
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Semiconductor
|
| MGFS45V2527 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应
2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFS39E2527A-01 |
2.5-2.7GHz HBT Integrated Circuit
|
Mitsubishi Electric Semiconductor
|
| AD8362 |
50Hz to 2.7GHz, 60dB TruPwrDETECTOR
|
Analog Devices
|
| SY87724LEHI SY87724LEHY |
3.3V AnyRate? MUX/DEMUX Up to 2.7GHz
|
Micrel Semiconductor
|
| EIM1011-4 |
10.7-11.7GHz Multi-Stage Power Amplifier
|
Excelics Semiconductor, Inc.
|
| RF5652PCK-411 |
5.0V, 2.4GHz TO 2.7GHz HIGH POWER AMPLIFIER
|
RF Micro Devices
|
| SPA1526Z |
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER
|
RFMD
|
| SY58011U11 |
7GHz, 1:2 CML FANOUT BUFFER/TRANSLATOR
|
Micrel Semiconductor
|
