| PART |
Description |
Maker |
| 2N6667 2N6666 2N6668 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
|
BOCA[Boca Semiconductor Corporation]
|
| 2N6666 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
|
Boca Semiconductor Corporation
|
| TIP107 |
PNP Plastic Medium-Power Silicon Transistors
|
Micro Commercial Compon...
|
| BD136-D |
Plastic Medium Power Silicon PNP Transistor
|
ON Semiconductor
|
| BD439G BD435G |
Plastic Medium Power Silicon NPN Transistor
|
Rectron Semiconductor
|
| BD675-D |
Plastic Medium-Power Silicon NPN Darlingtons
|
ON Semiconductor
|
| 2N4920 |
MEDIUM-POWER PLASTIC PNP SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N4921 2N4922 2N4923 |
MEDIUM-POWER PLASTIC NPN SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| BD180 BD180G |
Plastic Medium Power Silicon PNP Transistor
|
ON Semiconductor
|
| TIP110-D |
Plastic Medium-Power Complementary Silicon Transistors
|
ON Semiconductor
|
| BD237-D |
Plastic Medium Power Silicon NPN Transistor
|
ON Semiconductor
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
