| PART |
Description |
Maker |
| CDD2395F CDD2395 |
2.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 60 - 320 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-220AB
|
Continental Device India Limited
|
| CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
|
Continental Device India Limited
|
| 2SB1202 2SD1802 2SD1802T 2SD1802U 2SB1202T |
High-Current Switching Applications
TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252
TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-252
From old datasheet system
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-252
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor Corp
|
| RA110C RC110C RA113S RC113S RA103S RC103S RA114S R |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-236
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|2VAR
|
Amphenol, Corp.
|
| IRF7103Q IRF7103QTR IRF7103QN |
N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO
Power MOSFET(Vdss=50V)
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| 2SB1443 2SA1797 A5800341 2SC4672T100P 2SC4672T100Q |
Power Transistor (-50V/ -2A)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
Power Transistor (-50V, -2A)
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-243
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | SIP
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）|43
|
Rohm Co., Ltd.
|
| 2SD330D 2SD330E 2SB514C 2SB514E 2SB514F |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-220
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | TO-220AB
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|进步党| 50V五（巴西）总裁|甲一（c）| TO - 220AB现有
|
Advanced Interconnections, Corp.
|
| CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|
| DTA114YCAHZG |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
Rohm
|
| 2SC3623-T 2SC3623-T/JM 2SC3623A-T 2SC3623A-T/JM 2S |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK
Silicon transistor
|
NEC
|
| UMA9N FMA9 FMA9A FMA9N |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-88A
Digital transistor (Common Emitter Dual Transistors)
|
Rohm CO.,LTD.
Microsemi Corporation
ROHM[Rohm]
|
