| PART |
Description |
Maker |
| HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module
3.3 V SDRAM Modules(3.3 V 同步动态RAM模块)
3.3 V SDRAM Module(3.3 V SDRAM 模块)
4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| HYS72V2200GU-10 HYS72V2200GU-8 HYS64V2200GU-10 HYS |
Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:7ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
KPT 3C 3#20 SKT PLUG 3.3 2米x 64/72-Bit一银行内存模块3.3 4米64/72-Bit 2银行内存模块
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
SIEMENS A G
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| HYS72D64020GU HYS64D64020GU |
2.5 V 186-pin Unbuffered DDR-I SDRAM Modules(2.5 V 184脚、寄存型512MDDR-I SDRAM 模块)
|
SIEMENS AG
|
| K4S161622H |
16Mb H-die SDRAM Specification
IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
|
Samsung semiconductor
|
| HYS72D32300GBR-6-C HYS72D64320GBR-6-C HYS72D128320 |
DDR SDRAM Modules - 512 MB (64Mx72) PC3200 2-bank; Available 3Q04
DDR SDRAM Modules - 512 MB (64Mx72) PC3200 1-bank; Available 3Q04
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank, FBGA based; Available 3Q04
DDR SDRAM Modules - 512 MB (64Mx72) PC2700 2-bank; Available 2Q04
DDR SDRAM Modules - 512 MB (64Mx72) PC2700 1-bank; Available 2Q04
DDR SDRAM Modules - 256 MB (32Mx72) PC2700 1-bank; Available 2Q04
DDR SDRAM Modules - 1 GB (128Mx72) PC2700 2-bank; Available 2Q04
184-Pin Registered Double Data Rate SDRAM Module
|
INFINEON[Infineon Technologies AG]
|
| GMM2649233ETG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| W946432AD W946432A |
SDRAM 2Mx32
512K X 4 BANKS X 32 BITS DDR SDRAM
|
Winbond Electronics
WINBOND[Winbond]
|
| K4S561633C-N K4S561633C-P1H K4S561633C-P1L K4S5616 |
From old datasheet system
IC,SDRAM,4X4MX16,CMOS,BGA,54PIN,PLASTIC
16Mx16 SDRAM 54CSP 16Mx16显示内存54CSP
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| EBE51UD8AEFA-5C-E EBE51UD8AEFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) 512MB的无缓冲DDR2 SDRAM DIMM内存400字64位，1个等级）
|
Elpida Memory, Inc.
|
