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CSB1116AY - TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-92 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92

CSB1116AY_3213082.PDF Datasheet


Part No.	CSB1116AY CSB1116AG CSB1116Y
Description	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 1A I(C) \| TO-92 TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 1A I(C) \| TO-92
File Size	58.78K / 3 Page
Maker	N/A
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Full text search : TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-92 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92

Product Description search : TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-92 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92

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PART	Description	Maker
CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C	TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| TO-237VAR TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| TO-237 TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| TO-237 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| TO-237VAR TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 700MA I(C) \| TO-237AA TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| TO-237VAR TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 1.5A I(C) \| TO-237AA TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 1.5A I(C) \| TO-237 TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| TO-237 晶体管\|晶体管\|进步党\| 160V五（巴西）总裁\|37 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1.5A I(C) \| TO-237AA	Infineon Technologies AG
GET4870 GET4871 MPS2906A GES2906A GES2904 GES2905A	UNIJUNCTION TRANSISTOR\|5UA I(P)\|TO-18VAR TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 350MA I(C) \| TO-92 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 600MA I(C) \| TO-92 晶体管\|晶体管\|进步党\| 40V的五（巴西）总裁\| 600毫安一（c）\|2 TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 600MA I(C) \| TO-92 晶体管\|晶体管\|进步党\| 60V的五（巴西）总裁\| 600毫安一（c）\|2 UNIJUNCTION TRANSISTOR\|2UA I(P)\|TO-92 单结晶体管\|五成一（规划）\|2	Cornell Dubilier Electronics, Inc. Mitel Networks, Corp. GE Security, Inc.
2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB	1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3 TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 1.5A I(C) \| TO-126 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Silicon transistor	IRC Advanced Film NEC[NEC]
2N999 ST640 ST646 FT359	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 500MA I(C) \| CAN TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 60V V(BR)CEO \| 10A I(C) \| TO-3 TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 80V V(BR)CEO \| 10A I(C) \| TO-3 晶体管\|晶体管\|达林顿\|进步党\| 80V的五（巴西）总裁\| 10A条一（c）\|3 TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 350V V(BR)CEO \| 15A I(C) \| TO-3	STMicroelectronics N.V.
D1103 D3232 D45D1 D43D6 D45D3 D45D5 DG189AP/883B D	Refresh Counter TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 50V V(BR)CEO \| 6A I(C) \| TO-220AB TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 90V V(BR)CEO \| 4A I(C) \| TO-220AB TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 70V V(BR)CEO \| 6A I(C) \| TO-220AB TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 90V V(BR)CEO \| 6A I(C) \| TO-220AB TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 350V V(BR)CEO \| 15A I(C) \| TO-3 Non-Muxed Address DRAM Muxed地址内存 Analog Switch 模拟开 Peripheral Miscellaneous 周边杂项	Intersil, Corp. Rochester Electronics, LLC
CSA708 CSA708Y CSA708O	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| TO-92 NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS	Continental Device India Limited
2SB1094 2SB1094L 2SB1094M	Silicon transistor PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIER TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| SOT-186 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset	NEC Corp.
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1	TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 260V V(BR)CEO \| 7.5A I(C) TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 7.5A I(C) TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 7.5A I(C) TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 40V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 280V V(BR)CEO \| 7.5A I(C) 晶体管\|晶体管\| npn型\| 280伏特五（巴西）总裁\| 7.5AI（丙	NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
2N2670 2N1758 2N1756 2N2283 2N1218 2N1334 2N2067 2	TRANSISTOR \| BJT \| PNP \| 90V V(BR)CEO \| 3A I(C) \| TO-210VAR10 Open-Drain SOT µP Reset Circuit 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5-Pin, Multiple-Input, Programmable Reset ICs TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 3A I(C) \| MS-7 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 3A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 3A I(C) \| TO-13
BCX76-40 BF413 BC140-25 BC537-16 MPS6573 BC328-10	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 800MA I(C) \| TO-92 TRANSISTOR \| BJT \| NPN \| 170V V(BR)CEO \| 50MA I(C) \| TO-92 Stratix II GX FPGA 130K FPGA-1508 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| TO-92 TRANSISTOR \| BJT \| NPN \| 35V V(BR)CEO \| 200MA I(C) \| TO-92 IC MAX 7000 CPLD 64 44-TQFP IC FLEX 10KA FPGA Cyclone II FPGA 50K FBGA-484 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| TO-92 2GB DDR2 SDRAM VLP DIMM MAX 7000 CPLD 128 MC 100-TQFP TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-37 TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| TO-92 TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 200MA I(C) \| TO-92 TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 100MA I(C) \| TO-18 Cyclone FPGA 6K PQFP-240 CYCLONE III FPGA 119K 484FBGA MAX 7000 CPLD 64 MC 100-TQFP MAX 3000A CPLD 32 MC 44-TQFP Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) TRANSISTOR \| BJT \| NPN \| 1A I(C) \| TO-105 Dual Matched Amplifiers with Digitally Programmable Gain in MSOP; Package: MSOP; No of Pins: 10; Temperature Range: 0°C to 70°C IC MAX 7000 CPLD 128 144-TQFP MAX II CPLD 1270 LE 144-TQFP Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:220; Package/Case:484-FBGA; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No RoHS Compliant: No Leaded Cartridge Fuse; Current Rating:12A; Voltage Rating:32V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Voltage Rating:32V; Body Material:Glass; Diameter:6.985mm; Leaded Process Compatible:Yes; Length:32.385mm; Series:315P RoHS Compliant: Yes TRANSISTOR \| BJT \| PNP \| 6V V(BR)CEO \| TO-18 晶体管\|晶体管\|进步党\| 6V的五（巴西）总裁\|8 TRANSISTOR \| BJT \| NPN \| 18V V(BR)CEO \| 100MA I(C) \| TO-92 晶体管\|晶体管\|叩\| 18V的五（巴西）总裁\| 100mA的一（c）\|2 TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| TO-92 晶体管\|晶体管\|进步党\| 25V的五（巴西）总裁\|2 MAX 7000 CPLD 512 MC 208-PQFP 晶体管\|晶体管\|叩\| 20V的五（巴西）总裁\| 500mA的一（c）\|2 TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 1A I(C) \| TO-92 晶体管\|晶体管\|进步党\| 45V的五（巴西）总裁\| 1A条一（c）\|2 TRANSISTOR \| BJT \| PNP \| 32V V(BR)CEO \| TO-18	EM Microelectronic Bourns, Inc. SEMIKRON Samsung Semiconductor Co., Ltd. California Eastern Laboratories, Inc.

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