| PART |
Description |
Maker |
| LTC1799 LTC1799IS5 LTC1799CS5 |
1kHz to 33MHz Resistor Set SOT-23 Oscillator
|
Linear Technology
|
| LT5512EUF LT5512 |
1kHz-3GHz High Signal Level Down-Converting Mixer
|
Linear Technology Corporation
LINER[Linear Technology]
|
| LTC6900 LTC6900CS5 LTC6900IS5 |
Low Power, 1kHz to 20MHz Resistor Set SOT-23 Oscillator
|
LINER[Linear Technology]
|
| TB62708N EE08582 |
16BIT SHIFT REGISTER / LATCHES & CONSTANT CURRENT SOURCE DRIVER
From old datasheet system
16BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT SOURCE DRIVERS
|
Toshiba Semiconductor
|
| A43L2616V-6PH A43L2616V-7PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
|
AMIC Technology
|
| TB62701N E004109 |
16BIT SHIFT REGISTER / LATCH & CONSTANT CURRENT DRIVERS
16BIT SHIFT REGISTER, LATCH & CONSTANT CURRENT DRIVERS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
| TB62706BFG TB62706BNG |
16BIT SHIFT REGISTER
|
Toshiba
|
| HY51V18163HGJ HY51V18163HGJ-5 HY51V18163HGJ-6 HY51 |
1M x 16Bit EDO DRAM
|
Hynix Semiconductor
|
| W982516AH-75 W982516AH75L W982516AH-7 W982516AH-8H |
4M x 4 BANKS x 16BIT SDRAM
|
WINBOND[Winbond]
|
| LTC1799IS5PBF |
1kHz to 33MHz Resistor Set SOT-23 Oscillator; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 85°C SPECIALTY ANALOG CIRCUIT, PDSO5
|
Linear Technology, Corp.
|
