| PART |
Description |
Maker |
| HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256A |
32Kx8bit CMOS SRAM, standby current=25uA, 70ns
32Kx8bit CMOS SRAM, standby current=25uA, 55ns
32Kx8bit CMOS SRAM, standby current=25uA, 85ns
32Kx8bit CMOS SRAM, standby current=100uA, 70ns
32Kx8bit CMOS SRAM, standby current=100uA, 85ns
32Kx8bit CMOS SRAM, standby current=1mA, 70ns
32Kx8bit CMOS SRAM, standby current=1mA, 85ns
32Kx8bit CMOS SRAM, standby current=1mA, 55ns
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
Circular Connector; No. of Contacts:22; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 32Kx8bit CMOS SRAM
JT 22C 22#22D SKT RECP
32Kx8bit CMOS SRAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
ETC
HYNIX[Hynix Semiconductor]
http://
|
| LRS1387 |
64M ( X16) Dual Work Boot Block Flash & 8M ( X16) SRAM
|
SHARP
|
| WS512K32V WS512K32V-20H1MA WS512K32NV-15G1UC WS512 |
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM.3模块
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM3.3模块
GIGATRUE 550 CAT6 PATCH 2 FT, NON BOOT, GREEN
GIGATRUE 6 PATCH CBL CHANNEL, RED, 16 FT
GIGATRUE 550 CAT6 PATCH 100 FT, NON BOOT, BLUE
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 100F BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 3FT BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 15FT BL 25 PK
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:Yes
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:500W; Capacitance, Cd:3pF; Package/Case:SOT-143; Breakdown Voltage Min:6V; Junction Capacitance:10pF; Leaded Process Compatible:No
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:No
TRANSIENT SUPPRESSOR DIODE ARRAY, UNIDIRECTIONAL, 3.3V V(RWM), SO
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| HM62V256LFP-8ULT HM62V256LTM-8UL |
32,768-word x 8-bit low voltage operation CMOS static RAM, 85ns
|
Hitachi Semiconductor
|
| TE28F160B3T90 28F008B3 28F016B3 28F032B3 28F320B3 |
(TE28F Series) SMART 3 ADVANCED BOOT BLOCK 4-8-16-32-MBIT FLASH MEMORY FAMILY
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 3V PROM, 110 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48
RES 10K-OHM 2% 0.25W 100PPM MET-FILM AXIAL TR-13 R-MIL-PRF-39017 智能高级启动34 - - 6 - 2 - Mbit闪存家庭
TVS UNI-DIR 70V 400W SMA 智能高级启动3 - - 6 - 2 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 2 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 32 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY
|
TE Connectivity, Ltd.
Intel, Corp.
Intel Corp.
Intel Corporation
|
| M36W432-ZAT M36W432BZA M36W432T85ZA1T M36W432T85ZA |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
32 MBIT (2MB X16, BOOT BLOCK) FLASH MEMORY AND 4 MBIT (256K X16) SRAM, MULTIPLE MEMORY PRODUCT
|
ST Microelectronics
|
| M36W432TG-ZAT M36W432BGZA M36W432BG70ZA6T M36W432B |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
32 MBIT (2MB X16, BOOT BLOCK) FLASH MEMORY AND 4 MBIT (256KB X16) SRAM, MULTIPLE MEMORY PRODUCT
|
ST Microelectronics
|
| M36W416TG-ZAT M36W416BGZA M36W416BG70ZA1T M36W416B |
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product
|
ST Microelectronics
|
| M36W416TG 9175 M36W416TGZA M36W416BG70ZA1T M36W416 |
From old datasheet system
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M76DW52004TA M76DW52004TA70Z M76DW52004TA70ZT |
32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
|
ST Microelectronics
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| LH28F320S5H-L |
32M-BIT ( 2Mbit x16 / 4Mbit x8 )Boot Block Flash MEMORY(32M 2Mx16 / 4Mx8 )Boot Block 闪速存储器)
|
Sharp Corporation
|
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