| PART |
Description |
Maker |
| MTD6N15 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| IRF9643-001PBF IRF9643-003PBF IRF9643-005PBF IRF96 |
9 A, 150 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET
8.7 A, 350 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
1.75 A, 150 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET
1.75 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET
27 A, 100 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 150 V, 2.4 ohm, P-CHANNEL, Si, POWER, MOSFET
2.5 A, 100 V, 1.6 ohm, P-CHANNEL, Si, POWER, MOSFET
3.5 A, 150 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
11 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
VISHAY INTERTECHNOLOGY INC
|
| FMC5 FMG9 FMJ1 FMQ1 |
P-Channel NexFET™ Power MOSFET 6-DSBGA -55 to 150
N-Channel NexFET™ Power MOSFET 8-SON -55 to 150
TRANSISTOR | 20V V(BR)CEO | 30MA I(C) | SOT-25
Digital Media Processor 529-FCBGA 0 to 90 晶体管| 50V五（巴西）总裁| 100mA的一（c）|采用SOT - 25
|
飞思卡尔半导体(中国)有限公司
|
| HUF75823D3S HUF75823D3 FN4847 |
14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET 14 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
14A 150V 0.150 Ohm N-Channel UltraFET Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| RF1K4922396 RF1K49223 |
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET?/a> Power MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET
2.5A, -30V, 0.150 Ohm, Dual P-Channel LittleFET PowerMOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFETPower MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STF23NM60ND STI23NM60ND STW23NM60ND STP23NM60ND ST |
N-channel 600 V - 0.150 ヘ - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh⑩ II Power MOSFET
N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh?/a> II Power MOSFET
N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh II Power MOSFET
N-channel 600 V - 0.150 楼? - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh垄芒 II Power MOSFET
|
http://
STMicroelectronics
|
| VRF152E VRF152EMP VRF152E10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; VDD (V): 50; Coss (pF): 220; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| PPF150M |
N Channel MOSFET; Package: TO-254; ID (A): 21; RDS(on) (Ohms): 0.053; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 34 A, 100 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135 |
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Infineon Technologies AG
SIEMENS AG
SIEMENS A G
|
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