| PART |
Description |
Maker |
| 219MS8E |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 4.5 - 9 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC170C806 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 2.5 - 4 GHz
|
Hittite Microwave Corporation
|
| 220MS8E |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 5 - 12 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC208MS8 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 0.7 - 2.0 GHz
|
Hittite Microwave Corpo...
HITTITE[Hittite Microwave Corporation]
美国讯泰微波有限公司上海代表
|
| HMC175MS8 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 1.7 - 4.5 GHz
|
Hittite Microwave Corporati...
Hittite Microwave Corporation
美国讯泰微波有限公司上海代表
|
| HMC220MS8 |
XCV50E-7FGG256C - NOT RECOMMENDED for NEW DESIGN
GaAs MMIC SMT DOUBLEBALANCED MIXER, 5 - 12 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HMC251MS810 |
GaAs MMIC SMT DIVIDE-BY-2, 3.0 - 6.5 GHz
|
Hittite Microwave Corporation
|
| HMC251MS8 |
GaAs MMIC SMT DIVIDE-BY-2/ 3.0 - 6.5 GHz
GaAs MMIC SMT DIVIDE-BY-2, 3.0 - 6.5 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| HMC438MS8G |
SMT GaAs HBT MMIC DIVIDE-BY-5, DC - 7.0 GHz
SMT GaAs HBT MMIC DIVIDE-BY-5/ DC - 7.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
