PART |
Description |
Maker |
MT2170 |
RF SILICON AND SUBSYSTEMS SOLUTIONS FOR BROADBAND COMMUNICATIONS AND AUTOMOTIVE ELECTRONICS
|
Microtune,Inc
|
MT2122 |
RF SILICON AND SUBSYSTEMS SOLUTIONS FOR BROADBAND COMMUNICATIONS AND AUTOMOTIVE ELECTRONICS
|
Microtune,Inc
|
MT2266 |
RF SILICON AND SUBSYSTEMS SOLUTIONS FOR BROADBAND COMMUNICATIONS AND AUTOMOTIVE ELECTRONICS
|
Microtune,Inc
|
MT1110 |
RF SILICON AND SUBSYSTEMS SOLUTIONS FOR BROADBAND COMMUNICATIONS AND AUTOMOTIVE ELECTRONICS
|
http://
|
MT2131 |
RF SILICON AND SUBSYSTEMS SOLUTIONS FOR BROADBAND COMMUNICATIONS AND AUTOMOTIVE ELECTRONICS
|
Microtune,Inc
|
TC530COI TC534 |
5V Precision Data Acquisition Subsystems
|
Microchip Technology Inc.
|
TC530COI TC530CPJ TC534CKW TC534 TC534CPL TC530 |
5V PRECISION DATA ACQUISITION SUBSYSTEMS
|
TELCOM[TelCom Semiconductor, Inc]
|
1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns) (1N2xxx) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB (1N4525 - 1N4529) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE 100 A, 200 V, SILICON, RECTIFIER DIODE 2200 A, 800 V, SILICON, RECTIFIER DIODE 2200 A, 600 V, SILICON, RECTIFIER DIODE 2200 A, 400 V, SILICON, RECTIFIER DIODE 450 A, 150 V, SILICON, RECTIFIER DIODE 550 A, 50 V, SILICON, RECTIFIER DIODE 550 A, 150 V, SILICON, RECTIFIER DIODE 2500 A, 1300 V, SILICON, RECTIFIER DIODE 300 A, 900 V, SILICON, RECTIFIER DIODE 1800 A, 200 V, SILICON, RECTIFIER DIODE 1200 A, 3100 V, SILICON, RECTIFIER DIODE 2000 A, 2300 V, SILICON, RECTIFIER DIODE 3600 A, 2300 V, SILICON, RECTIFIER DIODE 100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
MXD1013 MXD1013PA MXD1013PD MXD1013SA MXD1013SE MX |
3-in-1 silicon delay line. Output delay 45ns. 3-in-1 silicon delay line. Output delay 30ns. 3-in-1 silicon delay line. Output delay 90ns. 3-in-1 silicon delay line. Output delay 12ns. 3-in-1 silicon delay line. Output delay 25ns. Silver Mica Capacitor; Capacitance:11pF; Capacitance Tolerance: 1pF; Series:CD4; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:2.5mm; Leaded Process Compatible:No RoHS Compliant: No 3-in-1 silicon delay line. Output delay 70ns. 3-in-1 silicon delay line. Output delay 75ns. 3-in-1 silicon delay line. Output delay 50ns. 3-in-1 silicon delay line. Output delay 20ns. 3-in-1 silicon delay line. Output delay 80ns. 3-in-1 silicon delay line. Output delay 15ns.
|
Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] Maixm MAXIM - Dallas Semiconductor
|
RBU801M RBU801M10 RBU804M RBU805M RBU806M RBU801M- |
8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
RECTRON LTD Rectron Semiconductor
|
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