| PART |
Description |
Maker |
| HB56HW164DB-8A |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Glenair, Inc.
|
| HB56UW264DB-8BL |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
ITT, Corp.
|
| HYM5V64214ASLTZG-60 HYM5V64214ASLTZG-80 HYM5V64214 |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
ON Semiconductor
|
| MT4LD164G-7BN MT4LD164G-6BN MT4LD164G-5BN MT4LDT16 |
x64 Burst EDO Page Mode DRAM Module X64的脉冲EDO页面模式内存模块
|
Cypress Semiconductor, Corp.
|
| IBM11S4325BP-70T IBM11S4325BM-60T |
x32 EDO Page Mode DRAM Module X32号，江户页面模式内存模块
|
Maxim Integrated Products, Inc.
|
| IBM11S2325LP-6RT IBM11S1325LP-70T IBM11S1325LP-6RT |
x32 EDO Page Mode DRAM Module X32号，江户页面模式内存模块
|
Abracon, Corp.
|
| MT9LD272G-5B MT18LD472G-5B MT9LD272G-5BN MT9LD272G |
x72 Burst EDO Page Mode DRAM Module x72脉冲EDO页面模式内存模块
|
Fujitsu, Ltd.
|
| MT8D432M-60B MT2D132M-60B MT4D232M-60B MT2DT132M-6 |
x32 Burst EDO Page Mode DRAM Module X32号，脉冲EDO页面模式内存模块
|
Micron Technology, Inc.
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| AS4C4M4E1-50JC AS4C4M4E1-50TC AS4C4M4E1-50TI AS4C4 |
4M X 4 EDO DRAM, 60 ns, PDSO24
x4 EDO Page Mode DRAM
|
ALLIANCE SEMICONDUCTOR CORP
|
| IS41C4100-35J IS41LV4100-60JI IS41C4100 IS41C4100- |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 4 EDO DRAM, 60 ns, PDSO20
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
