| PART |
Description |
Maker |
| GS840E18 GS840E36B-166I GS840E18B-166I GS840E32T-1 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8.5 ns, PBGA119
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8.5 ns, PBGA119
4Mb56K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步静态RAM（带2位脉冲地址计数器）)
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http://
GSI Technology, Inc.
|
| GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器
256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs
Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC
Electronic Theatre Controls, Inc.
|
| GS840F18AT-10I GS840F18AT-12 GS840F18AT-7.5 GS840F |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
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| GS840F18AGT-8I GS840F18AT-10 GS840F32AT-10 GS840F1 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 10 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 10 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 12 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 12 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8.5 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 8 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8.5 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 8.5 ns, PQFP100
|
Electronic Theatre Controls, Inc.
GSI Technology, Inc.
|
| GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I |
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology, Inc.
Molex, Inc.
|
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| GS88136BGD-300I GS88132BT-200 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 5 ns, PBGA165
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
| E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8）启动块闪存系列
ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel, Corp.
PROM
Intel Corp.
Intel Corporation
|
| GS88032AT-166 GS88018AT-166 GS88036AT-166 GS88032A |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 12k × 1856K × 3256K × 36 9Mb以上同步突发静态存储器
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 12k × 18256K × 32256K × 36 9Mb以上同步突发静态存储器
|
Electronic Theatre Controls, Inc.
|
| AT49BV2048 AT49LV2048 AT49LV2048A AT49LV2048A-70RC |
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage??Flash Memory
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 2兆位56 × 8/128K × 16）单2.7伏电池电压⑩闪存
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 3V PROM, 70 ns, PDSO44
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 2.7V PROM, 90 ns, PDSO48
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage⑩ Flash Memory
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage?/a> Flash Memory
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
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