PART |
Description |
Maker |
KMM372F3200BS1 KMM372F3280BS1 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新,3.3
|
Samsung Semiconductor Co., Ltd.
|
KMM53232004BV |
32M x 32 DRAM SIMM(32M x 32 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
H5PS5162GFR-S5L H5PS5162GFR-S5I H5PS5162GFR-S5J H5 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84 7.50 X 12.50 MM, ROHS COMPLIANT, FBGA-84 32M X 16 DDR DRAM, 0.45 ns, PBGA84
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
EDX5116ABSE-3B-E EDX5116ABSE-3A-E EDX5116ABSE-3C-E |
512M bits XDR DRAM (32M words 16 bits) 32M X 16 RAMBUS, PBGA104
|
Elpida Memory, Inc. DRAM
|
MC-4532CC726EF-A80 MC-4532CC726EF-A10 MC-4532CC726 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
ELPIDA MEMORY INC
|
HYB39S5121600AT-8 HYB39S5121600AT-7 HYB39S5121600A |
512Mb (32M x 16) PC100 2-2-2 Available Q402 512Mb (32M x 16) PC133 2-2-2 Available Q402 512Mb (32M x 16) PC133 3-3-3 Available Q402 128M X 4 SYNCHRONOUS DRAM, 5 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/ |
32M X 8 DDR DRAM, 0.7 ns, PDSO66 ROHS COMPLIANT, TSOP2-66 32M X 8 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66 64M X 4 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66 256Mb H-die DDR SDRAM Specification
|
Atmel, Corp. SAMSUNG SEMICONDUCTOR CO. LTD.
|
MC-4532CD646XF-A10 MC-4532CD646XF-A80 MC-4532CD646 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 SOCKET TYPE, DIMM-168 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory, Inc.
|
V59C1512164QDLJ25H V59C1512404QDLJ25AI |
32M X 16 DDR DRAM, PBGA84 128M X 4 DDR DRAM, PBGA60
|
PROMOS TECHNOLOGIES INC
|
W332M72V-133SBI W332M72V-XBX |
32Mx72 Synchronous DRAM 32M X 72 SYNCHRONOUS DRAM, 5.5 ns, PBGA208
|
White Electronic Design... WHITE ELECTRONIC DESIGNS CORP
|
TC59SM808CMBL-80 |
32M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA60
|
|
W3E32M72SR-250SBC |
32M X 72 DDR DRAM, 0.8 ns, PBGA208
|
MICROSEMI CORP-PMG MICROELECTRONICS
|