PART |
Description |
Maker |
VUB120-12NO2 VUB120-16NO2 VUB160-16NO2 VUB160-12NO |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 140 A, 1200 V, N-CHANNEL IGBT Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
VID75-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VID25-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VID75-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VID25-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
SKM100GAL163D SKM200GAL123D SKM400GA123D SKM300GA1 |
SEMITRANS IGBT Modules New Range SEMITRANS IGBT模块的新范围 SEMITRANS IGBT Modules New Range 100 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
VUB50-16PO1 |
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS
|
TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE 150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
SEMIX352GB128DS08 |
SPT IGBT Modules 370 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|