| PART |
Description |
Maker |
| SL74HC123N SL74HC123D SL74HC123 HC123 |
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1000V; Forward Current Avg Rectified, IF(AV):2A; Non Repetitive Forward Surge Current Max, Ifsm:70A; Forward Voltage Max, VF:1.1V; Package/Case:DO-15 双Retriggerable单稳态触发器
Dual Retriggerable Monostable Multivibrator
|
System Logic Semiconductor Co., Ltd.
SLS[System Logic Semiconductor]
|
| NTE6102 NTE6109 NTE6103 NTE6104 NTE6108 |
Industrial rectifier, 550A. Cathode to case. Repetitive peak reverse voltae 1600V.
Industrial rectifier, 550A. Cathode to case. Repetitive peak reverse voltae 1200V.
Industrial rectifier, 550A. Anode to case. Repetitive peak reverse voltae 600V.
|
NTE[NTE Electronics]
|
| BD825-16 BD827-10 BD827-6 BD829-6 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1.5AI（丙）|02
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|202
|
Analog Devices, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP150 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66
|
|
| IRFD9024 |
Repetitive Avalanche Rated
|
Vishay Siliconix
|
| HD-15531883 HD-15531/883 |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:30V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:50uA
Multiconductor Cable; Number of Conductors:6; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FRPE - Flame Retardant Polyethylene; Leaded Process Compatible:Yes; Capacitance:17uF; Conductor Material:Copper RoHS Compliant: Yes
|
Intersil Corporation
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| IRHE8110 IRHE7110 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
| IRFBE30 |
Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Kersemi Electronic Co.,...
|
| IRF130 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
|
New Jersey Semi-Conduct...
|
| IRHF7310SE |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
| JANSH2N7262 IRHF7230 IRHF8230 JANSR2N7262 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
