| PART |
Description |
Maker |
| BSS123 BSS123-T |
150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-channel TrenchMOS(TM) transistor Logic Level FET
N-channel TrenchMOS TM transistor
N-channel TrenchMOS transistor
|
Philips
NXP Semiconductors
|
| BSP030-04 BSP030 |
N-channel TrenchMOS intermediate level FET N沟道 TrenchMOS 中间级场效应
N-channel enhancement mode field-effect transistor
From old datasheet system
|
NXP Semiconductors N.V.
Philips
|
| PSMN015-110P PSMN015-110P127 |
Trenchmos (tm) Sta
N-channel TrenchMOS SiliconMAX standard level FET
|
NXP Semiconductors N.V.
|
| PHD22NQ20T-01 PHD22NQ20T |
N-channel TrenchMOS standard level FET
N-channel TrenchMOS standard level FET 21.1 A, 200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-channel TrenchMOS?? standard level FET
N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PH3230S PH3230S115 |
N-channel Trenchmos (tm) logic level FET; Package: SOT669 (LFPAK); Container: Tape reel smd 107 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235AA
N-channel TrenchMOS logic level FET
N-channel TrenchMOS⑩ logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PSMN057-200B PSMN057-200B_1 |
N-channel TrenchMOS(tm) transistor
N-channel TrenchMOS transistor
From old datasheet system
N-channel TrenchMOS TM transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| IRF530N |
N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHKD3NQ10T PHKD3NQ10T_1 |
Dual N-channel TrenchMOS(tm) transistor
From old datasheet system
Dual N-channel TrenchMOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BUK7606-55 BUK7606-55A |
TrenchMOS（TM）transistor Standard level FET(TrenchMOS（TM）晶体管标准电平FET)
Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 50V; Case Size: 22x25 mm; Packaging: Bulk
TrenchMOSTM）transistor Standard level FET(TrenchMOSTM）晶体管标准电平FET) TrenchMOS（商标）一级标准场效应晶体管（TrenchMOS（商标）晶体管标准电平场效应管）
|
Philips Semiconductors
3M Company
|
| PHX8NQ11T PHX8NQ11T127 |
N-channel TrenchMOS-TM standard level FET 7.5 A, 110 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
7.5 A, 110 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220F, FULL PACK-3
N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
