| PART |
Description |
Maker |
| SFH4511 Q62703Q5557 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| CF750 Q62702-F1391 |
From old datasheet system
GaAs MMIC (Biased Dual Gate GaAs FET) 砷化镓微波单片集成电路（偏置双门砷化镓场效应管）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| LD267 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
|
Siemens Semiconductor G...
|
| TG2213S |
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| SFH402-3 Q62702-P96 SFH401 Q62702-P784 Q62702-P786 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
From old datasheet system
|
Siemens Semiconductor G...
http://
SIEMENS[Siemens Semiconductor Group]
红外LED
|
| TG2206F |
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
| FCI-H125G-GAAS-100 FCI-H250G-GAAS-100 |
(FCI-H125G-GAAS-100 / FCI-H250G-GAAS-100) GaAs Photodiodes
|
Laser Components
|
| GN04022N |
GaAs device - GaAs MMICs - Switch
|
Panasonic
|
| CFK2062-P1 |
800 to 900 MHz 30 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| NES1821B-30 |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
