PART |
Description |
Maker |
BLF573S BLF573 |
HF / VHF power LDMOS transistor A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. HF - VHF power LDMOS transistor
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NXP Semiconductors N.V.
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BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLS6G3135-20 BLS6G3135S-20 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors
|
BLL6H1214LS-250 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
BLL6H1214LS-500 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
BLF6G22-45 |
Power LDMOS transistor Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
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NXP Semiconductors N.V.
|
BLF6G20-45 BLF6G20S-45 |
Power LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF6G20-45<SOT608A (CDFM2)|<<http://www.nxp.com/packages/SOT608A.html<1<Always Pb-free,;BLF6G20-45<SOT608A (CDFM2)|<<http://www.nxp.com/packages/SOT608A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF6G20-180RN BLF6G20LS-180RN |
Power LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF6G20LS-180RN<SOT502B (LDMOST)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF6G20LS-180RN<SOT502B (LDMOST)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF7G22LS-130 |
Power LDMOS transistor BLF7G22LS-130<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF7G22LS-130<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,; Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
PTF180601 PTF180601C PTF180601E |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS的场效应晶体0瓦,DCS / PCS的兆赫波8050年,1930-1990兆赫 LDMOS Field Effect Transistor 60 W DCS/PCS Band 1805-1880 MHz 1930-1990 MHz LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
BLS7G2325L-105 BLS7G2325L-105-15 |
Power LDMOS transistor BLS7G2325L-105<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; Power LDMOS transistor
|
NXP Semiconductors N.V.
|
NE55410GR NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
NEC
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