| PART |
Description |
Maker |
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF7G22LS-100P |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| MAPL-000978-0075LF MAPL-000978-0075LN MAPL-000978- |
LDMOS Pulsed Power Transistor 75W, 978 MHz, 400μs Pulse, 1% Duty
LDMOS Pulsed Power Transistor 75W, 978 MHz, 400楼矛s Pulse, 1% Duty
LDMOS Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| SD1208-50-5 |
CAP AND SAFETY CHANN, BNC
|
Winchester Electronics Corporation
|
| BLF6G10LS-200 |
Power LDMOS transistor
|
NXP Semiconductors
|
| LY942 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF6G10L-40BRN |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| MRF085H |
RF Power LDMOS Transistor
|
NXP Semiconductors
|
| BLF8G27LS-140 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLC8G27LS-160AV |
Power LDMOS transistor
|
NXP Semiconductors
|
| LC821-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
